- 非IC关键词
企业档案
- 相关证件：
- 会员类型：普通会员
- 岳小姐
- 电话：0755-83268582
- 手机：13316880609
- 代生
- 电话：0755-83268582
- 手机：13312991572
- 地址：福田区振华路122号海外装饰大厦B栋7B-49
- E-mail：747314849@qq.com
产品分类
您的当前位置：深圳市宁丰科技信息有限公司 > 元器件产品
产品信息
Features
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• LLC converters, resonant converters
Description
This device is an N-channel Power MOSFET
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. This
revolutionary Power MOSFET associates a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters