深圳市中立信电子科技有限公司

RTR040N03FRA

Nch 30V 4A Middle Power MOSFET

Features RTR040N03FRA

1) Low on - resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (TSMT3).

Application RTR040N03FRA

Switching

Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)

Parameter Symbol Value Unit

Drain - Source voltage VDSS 30 V

Continuous drain current ID ±4.0 A

Pulsed drain current IDP *1 ±16 A

Gate - Source voltage VGSS ±12 V

Power dissipation PD *2 1.0 W PD *3 0.76 W

Junction temperature Tj 150 ℃

Operating junction and storage temperature range Tstg -55 to +150 ℃

Electrical characteristics (Ta = 25°C) RTR040N03FRA

Parameter Symbol Conditions

Values Unit Min. Typ. Max.

Drain - Source breakdown voltage

V(BR)DSS VGS = 0V, ID = 1mA 30 - - V

Breakdown voltage

temperature coefficient

ΔV(BR)DSS ID = 1mA

- 29.0 - mV/℃

ΔTj referenced to 25℃

Zero gate voltage

drain current

IDSS VDS = 30V, VGS = 0V - - 1 μA

Gate - Source leakage current IGSS VGS = 12V, VDS = 0V - - 10 μA

Gate threshold voltage VGS(th) VDS = 10V, ID = 1mA 0.5 - 1.5 V

Gate threshold voltage

temperature coefficient

ΔVGS(th) ID = 1mA - -1.6 - mV/℃

ΔTj referenced to 25℃

Static drain - source

on - state resistance

RDS(on) *4

VGS = 4.5V, ID = 4.0A - 34 48

VGS = 4.0V, ID = 4.0A - 36 50 mΩ

VGS = 2.5V, ID = 4.0A - 47 66

Gate resistance RG f = 1MHz, open drain - 6.4 - Ω

Forward Transfer

Admittance |Yfs|*4 VDS = 10V, ID = 4.0A 4.0 - - S